Method for treating SiOCH film with hydrogen plasma
US9029272B1 · kind B1 · utility
506Cited by
1References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Oct 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.