Resistive switching memories
US9029829B1 · kind B1 · utility
9Cited by
12References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Jul 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a first resistive switching device having a first terminal and a second terminal, a switching device having a first terminal and a second terminal, and an access device having a first access terminal and a second access terminal. The first access terminal is coupled to the first terminal of the first resistive switching device and the first terminal of the switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.