Integrated circuit on SOI comprising a bipolar transistor with isolating trenches of distinct depths

US9029955B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA

Inventors

• Claire Fenouillet-Beranger · Grenoble, FR
• Pascal Fonteneau · Theys, FR

Key dates

• Filing date: Jul 2, 2013
• Grant date: May 12, 2015
• Expiry date: Jul 2, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/931

Abstract

An integrated circuit includes a semiconductor substrate, a silicon layer, a buried isolating layer arranged between the substrate and the layer, a bipolar transistor comprising a collector and emitter having a first doping, and a base and a base contact having a second doping, the base forming a junction with the collector and emitter, the collector, emitter, base contact, and the base being coplanar, a well having the second doping and plumb with the collector, emitter, base contact and base, the well separating the collector, emitter and base contact from the substrate, having the second doping and extending between the base contact and base, a isolating trench plumb with the base and extending beyond the layer but without reaching a bottom of the emitter and collector, and another isolating trench arranged between the base contact, collector, and emitter, the trench extending beyond the buried layer into the well.