Sputtering target and process for producing same
US9034154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2010 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Dec 16, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.