Method and system for forming patterns with charged particle beam lithography
US9034542B2 · kind B2 · utility
2Cited by
12References
29Claims
0Family size
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Key dates
| Filing date | Apr 21, 2014 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.