Antimony compounds useful for deposition of antimony-containing materials

US9034688B2 · kind B2 · utility

Assignee

• ENTEGRIS, INC. · US

Inventors

• Tianniu Chen · Westford, US
• William Hunks · Waterbury, US
• Philip S. H. Chen · Bethel, US
• Chongying Xu · New Milford, US
• Leah Maylott · Farmington, US

Key dates

• Filing date: Mar 18, 2014
• Grant date: May 19, 2015
• Expiry date: Mar 18, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).