Method and structure for dielectric isolation in a fin field effect transistor

US9034715B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Yanfeng Wang · Qingdao, CN
• Dechao Guo · Niskayuna, US
• Darsen D. Lu · Mount Kisco, US
• Philip J. Oldiges · Lagrangeville, US
• Gan Wang · Fishkill, US
• Xin Wang · Los Angeles, US

Key dates

• Filing date: Mar 12, 2013
• Grant date: May 19, 2015
• Expiry date: May 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A finFET and method of fabrication are disclosed. A sacrificial layer is formed on a bulk semiconductor substrate. A top semiconductor layer (such as silicon) is disposed on the sacrificial layer. The bulk semiconductor substrate is recessed in the area adjacent to the transistor gate and a stressor layer is formed in the recessed area. The sacrificial layer is selectively removed and replaced with an insulator, such as a flowable oxide. The insulator provides isolation between the transistor channel and the bulk substrate without the use of dopants.