Halo region formation by epitaxial growth
US9034741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method for manufacturing the same, wherein the method includes fabrication of field effect transistors (FET). The method includes growing a doped epitaxial halo region in a plurality of sigma-shaped source and drain recesses within a semiconductor substrate. An epitaxial stressor material is grown within the sigma-shaped source and drain recesses surrounded by the doped epitaxial halo forming source and drain regions with controlled current depletion towards the channel region to improve device performance. Selective growth of epitaxial regions allows for control of dopants profile and hence tailored and enhanced carrier mobility within the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.