Methods of selectively removing a substrate material
US9034769B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.