Nitride shallow trench isolation (STI) structures
US9035418B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Aug 19, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Aug 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A shallow trench isolation (STI) structure includes a top surface formed completely of silicon nitride. The top surface of the STI structure is coplanar with a top substrate surface or extends above the top substrate surface. The STI structures include further dielectric materials beneath the silicon nitride and an oxide liner and any portions that extend above the substrate surface are formed of silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.