Patent · US Active

Side vented pressure sensor device

US9040335B2 · kind B2 · utility

4Cited by

8References

14Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Low Boon Yew · Petaling Jaya, MY
Chee Seng Foong · Bandar Baru Sungai Buloh, MY
Teck Beng Lau · Petaling Jaya, MY

Key dates

Filing date	Sep 17, 2013
Grant date	May 26, 2015
Priority date	—
Expiry date	Nov 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.