Patent · US Active

Singulation processes

US9040389B2 · kind B2 · utility

5Cited by

9References

29Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Mackh · Dresden, DE
Maria Heidenblut · Schwarzenfeld, DE
Adolf Koller · Regensburg, DE
Anatoly Sotnikov · Regensburg, DE

Key dates

Filing date	Oct 9, 2012
Grant date	May 26, 2015
Priority date	—
Expiry date	Oct 9, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/6834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.