Process for producing localised GeOI structures, obtained by germanium condensation
US9040391B2 · kind B2 · utility
8Cited by
0References
5Claims
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Assignee
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Key dates
| Filing date | Aug 12, 2009 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Feb 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for making at least one GeOI structure by germanium condensation of a SiGe layer supported by a layer of silicon oxide. The layer of silicon oxide is doped with germanium, the concentration of germanium in the layer of silicon oxide being such that it lowers the flow temperature of the layer of silicon oxide below the oxidation temperature allowing germanium condensation of the SiGe layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.