Replacement metal gate structure for CMOS device
US9040404B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 14, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83135
Abstract
A method of fabricating a replacement metal gate structure for a CMOS device. The method includes forming a dummy gate structure on an nFET portion and a pFET portion of the CMOS device; depositing an interlayer dielectric between the dummy gate structures; removing the dummy gate structures from the nFET portion and the pFET portion, resulting in a recess on the nFET portion and a recess on the pFET portion; depositing a first layer of titanium nitride into the recesses on the nFET portion and pFET portion; removing the first layer of titanium nitride from the nFET portion only; depositing a second layer of titanium nitride into the recesses on the nFET portion and pFET portion; depositing a gate metal onto the second layer of titanium nitride in the recesses on the nFET portion and pFET portion to fill the remainder of the recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.