Method of plasma etching
US9040427B2 · kind B2 · utility
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4References
17Claims
0Family size
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Key dates
| Filing date | Oct 1, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Oct 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.