Single-sided access device and fabrication method thereof

US9041099B2 · kind B2 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Shyam Surthi · Boise, US
• Sheng-Wei Yang · Taipei, TW

Key dates

• Filing date: Apr 11, 2011
• Grant date: May 26, 2015
• Expiry date: Nov 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/053

Abstract

The present invention provides a single-sided access device including an active fin structure comprising a source region and a drain region; an insulating layer interposed between the source region and the drain region; a trench isolation structure disposed at one side of the active fin structure; a single-sided sidewall gate electrode disposed on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by trench isolation structure and the single-sided sidewall gate electrode; and a gate protrusion laterally and electrically extended from the single-sided sidewall gate electrode and embedded between the source region and the drain region under the insulating layer.