Fin shape for fin field-effect transistors and method of forming

US9041125B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Jr-Jung Lin · Hsinchu, TW
• Chih-Han Lin · Hsinchu, TW
• Ming-Ching Chang · Hsinchu, TW
• Chao-Cheng Chen · Hsinchu, TW

Key dates

• Filing date: Apr 19, 2013
• Grant date: May 26, 2015
• Expiry date: Jun 7, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A fin field-effect transistor (finFET) and a method of forming are provided. A gate electrode is formed over one or more fins. Notches are formed in the ends of the gate electrode along a base of the gate electrode. Optionally, an underlying dielectric layer, such as a shallow trench isolation, may be recessed under the notch, thereby reducing gap fill issues.