Method and system for forming high accuracy patterns using charged particle beam lithography
US9043734B2 · kind B2 · utility
13Cited by
23References
8Claims
0Family size
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Key dates
| Filing date | Dec 13, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.