EUV mask inspection system
US9046754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2009 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Nov 15, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95676
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.