System, method and reticle for improved pattern quality in extreme ultraviolet (EUV) lithography and method for forming the reticle
US9046776B2 · kind B2 · utility
1Cited by
2References
21Claims
0Family size
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Key dates
| Filing date | Feb 4, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | May 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.