Plasma etching method
US9048191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Jun 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.