Method for selectively modifying spacing between pitch multiplied structures
US9048194B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.