Bidirectional field effect transistor and method
US9048214B2 · kind B2 · utility
8Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Nov 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
In one embodiment, a structure for a semiconductor device has trench shield electrodes formed above and below a gate electrode. The structure can be configured to function as a bidirectional power field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.