Uniform masking for wafer dicing using laser and plasma etch

US9048309B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Mohammad Kamruzzaman Chowdhury · Santa Clara, US
• Wei-Sheng Lei · San Jose, US
• Todd Egan · Fremont, US
• Brad Eaton · Menlo Park, US
• Madhava Rao Yalamanchili · معلمی نژاد, US
• Ajay Kumar · Fairport, US

Key dates

• Filing date: Jun 13, 2013
• Grant date: Jun 2, 2015
• Expiry date: Jun 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/78
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.