Patent · US Active

Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures

US9048336B2 · kind B2 · utility

4Cited by

2References

9Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Thilo Scheiper · Dresden, DE
Jan Hoentschel · Dresden, DE
Steven Langdon · Dresden, DE

Key dates

Filing date	Jul 20, 2011
Grant date	Jun 2, 2015
Priority date	—
Expiry date	Sep 21, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a P-channel transistor and an N-channel transistor after selectively forming a threshold adjusted semiconductor material for the P-channel transistor, while the active region of the N-channel transistor is still masked.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.