Boron ionization for aluminum oxide etch enhancement
US9051655B2 · kind B2 · utility
1Cited by
3References
11Claims
0Family size
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Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Sep 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.