Silicon carbide single crystal and manufacturing method of the same
US9053834B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jul 29, 2011 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.