Local tailoring of fingers in multi-finger fin field effect transistors

US9053982B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Markus Brink · White Plains, US
• Josephine B. Chang · Mahopac, US
• Michael A. Guillorn · Locke, US
• HsinYu Tsai · White Plains, US

Key dates

• Filing date: Nov 16, 2012
• Grant date: Jun 9, 2015
• Expiry date: Dec 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A cluster of semiconductor fins is formed on an insulator layer. A masking material layer is formed over the array of semiconductor fins such that spaces between adjacent semiconductor fins are filled with the masking material layer. A photoresist layer is applied over the masking material layer, and is lithographically patterned. The masking material layer is etched to physically expose a sidewall surface of a portion of an outermost semiconductor fin in regions not covered by the photoresist layer. A recessed region is formed in the insulator layer such that an edge of the recessed region is formed within an area from which a portion of the semiconductor fin is removed. The photoresist layer and the masking material layer are removed. Within the cluster, a region is provided that has a lesser number of semiconductor fins than another region in which semiconductor fins are not etched.