Patent · US Active

Method for deep silicon etching using gas pulsing

US9054050B2 · kind B2 · utility

6Cited by

3References

14Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Scott Lefevre · Ballston Spa, US
Alok Ranjan · Austin, US

Key dates

Filing date	Nov 6, 2013
Grant date	Jun 9, 2015
Priority date	—
Expiry date	Nov 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. Techniques include using a continuous process that comprises a cyclic gas-pulsing process of alternating chemistries. One process gas mixture includes a halogen-containing silicon gas and oxygen that creates an oxide layer. A second process gas mixture includes a halogen-containing gas and a fluorocarbon gas that etches oxide and silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.