Stress buffer layer for integrated microelectromechanical systems (MEMS)

US9056763B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Christian Geissler · Teugn, DE
• Thorsten Meyer · Regensburg, DE
• Gerald Ofner · Regensburg, DE
• Reinhard Mahnkopf · Oberhaching, DE
• Andreas Augustin · Munich, DE
• Christian Mueller · Wiesbaden, DE

Key dates

• Filing date: Sep 27, 2013
• Grant date: Jun 16, 2015
• Expiry date: Sep 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3511
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.