Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 · kind B2 · utility
9Cited by
42References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31771
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.