Method for fabricating semiconductor device
US9058984B2 · kind B2 · utility
0Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | May 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.