Lateral heterojunction bipolar transistors
US9059016B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/80
Abstract
A lateral heterojunction bipolar transistor is formed on a substrate including a top semiconductor layer of a first semiconductor material having a first band gap and of a first conductivity type. A stack of an extrinsic base and a base cap is formed over the top semiconductor layer. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor layer that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap, having a doping of the second conductivity type and being lattice matched to the first semiconductor material is selectively deposited to form an emitter contact region and a collector contact region, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.