System for in-situ film stack measurement during etching and etch control method
US9059038B2 · kind B2 · utility
4Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2013 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.