Reliable back-side-metal structure
US9059111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2013 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Jun 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure, method of manufacturing the same and design structure thereof are provided. The semiconductor structure includes a substrate including a semiconductor layer and a plurality of TSVs embedded therein. At least one TSV has a TSV tip extending from a backside surface of the substrate. The semiconductor structure further includes a multilayer metal contact structure positioned on the backside surface of the substrate. The multilayer metal contact structure includes at least a conductive layer covering the backside surface of the substrate and covering protruding surfaces of the TSV tip. The conductive layer has a non-planar first surface and a substantially planar second surface opposite of the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.