Method for producing bonding connection of semiconductor device
US9059182B2 · kind B2 · utility
1Cited by
12References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2006 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Sep 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An arrangement is employed in a semiconductor device having a semiconductor body, the semiconductor body having a surface. The arrangement includes a surface portion on which a first metallization layer is arranged, and an alignment pattern arranged between the surface portion and the first metallization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.