Interconnect structures containing a photo-patternable low-k dielectric with a curved sidewall surface
US9059249B2 · kind B2 · utility
2Cited by
28References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Sep 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure is provided which includes at least one patterned and cured low-k material located directly on a surface of a substrate; and at least one least one conductively filled region embedded within an interconnect pattern located within the at least one patterned and cured low-k material, wherein the at least one conductively filled region has an inflection point at a lower region of the interconnect pattern that is in proximity to an upper surface of the substrate and the interconnect region having an upper region that has substantially straight sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.