Pre-gate, source/drain strain layer formation

US9059286B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Judson R. Holt · Wappingers Falls, US
• Viorel Ontalus · Danbury, US
• Keith H. Tabakman · Newburgh, US

Key dates

• Filing date: Mar 31, 2014
• Grant date: Jun 16, 2015
• Expiry date: Apr 3, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/798

Abstract

A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator.