Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
US9059391B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2013 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Feb 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
The present disclosure provides a self-rectifying RRAM, including: a first electrode layer formed of a first metal element; a second electrode layer formed of a second metal element different from the first metal element; and a first resistive-switching layer and a second resistive-switching layer sandwiched between the first electrode layer and the second electrode layer, wherein the first resistive-switching layer and the second switching layer form an ohmic contact, and the first resistive-switching layer has a first bandgap lower than a second bandgap of the second resistive-switching layer. Furthermore, an RRAM 3D crossbar array architecture is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.