Methods for etching materials used in MRAM applications
US9059398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.