Photolithography mask method for a wafer, method for producing same, and photolithography method for wafer using the same
US9063407B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Aug 10, 2011 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 8, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/62
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.