Patent · US Active

Photolithography mask method for a wafer, method for producing same, and photolithography method for wafer using the same

US9063407B2 · kind B2 · utility

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15Claims
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Key dates

Filing dateAug 10, 2011
Grant dateJun 23, 2015
Priority date
Expiry dateJun 8, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/62
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.