Phase change memory device
US9064565B2 · kind B2 · utility
5Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Oct 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device with memory cells is formed from a phase change memory element and a selection switch. A reference cell is formed from a similar phase change memory element and an associated selection switch and is associated to a group of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating for drift in the properties of the memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.