Dual three-dimensional (3D) resistor and methods of forming

US9064786B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James P. Di Sarro · Allen, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Christopher S. Putnam · South Burlington, US

Key dates

• Filing date: Mar 14, 2013
• Grant date: Jun 23, 2015
• Expiry date: Mar 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Various embodiments include dual three-dimensional (3D) resistor structures and methods of forming such structures. In some embodiments, a dual 3D resistor structure includes: a dielectric layer having a first set of trenches extending in a first direction through the dielectric layer; and a second set of trenches overlayed on the first set of trenches, the second set of trenches extending in a second direction through the dielectric layer, the second set of trenches and the first set of trenches forming at least one dual 3D trench; and a resistor material overlying the dielectric layer and at least partially filling the at least one dual 3D trench along the first direction and the second direction.