Trench patterning with block first sidewall image transfer
US9064813B2 · kind B2 · utility
13Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.