Semiconductor structure having metal gate and manufacturing method thereof
US9064814B2 · kind B2 · utility
3Cited by
40References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Sep 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a semiconductor device first provides a substrate having at least a first transistor formed thereon. The first transistor includes a first conductivity type. The first transistor further includes a first metal gate and a protecting layer covering sidewalls of the first metal gate. A portion of the first metal gate is removed to form a first recess and followed by removing a portion of the protecting layer to form a second recess. Then, an etch stop layer is formed in the second recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.