Heterojunction semiconductor device with conductive barrier portion and manufacturing method
US9064847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.