Gradient dopant of strained substrate manufacturing method of semiconductor device
US9064893B2 · kind B2 · utility
4Cited by
77References
18Claims
0Family size
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Key dates
| Filing date | May 13, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | May 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device is provided. The method includes at least the following steps. A gate structure is formed on a substrate. An epitaxial structure is formed on the substrate, wherein the epitaxial structure comprises SiGe, and the Ge concentration in the epitaxial structure is equal to or higher than 45%. A first cap layer is formed on the epitaxial structure, wherein the first cap layer comprises Si. The first cap layer is doped with boron for forming a flat top surface of the first cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.