Bipolar semiconductor component with a fully depletable channel zone

US9064923B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Roman Baburske · Otterfing, DE
• Josef Lutz · Rohrau, AT
• Ralf Siemieniec · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: May 21, 2013
• Grant date: Jun 23, 2015
• Expiry date: May 21, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A bipolar semiconductor component includes a semiconductor body having first and second substantially parallel main surfaces and at least one load pn junction, a first metallization on the first surface, a second metallization on the second surface, and a current path running in the semiconductor body from the first metallization to the second metallization only through n-doped zones, including between first and second p-doped zones which are in contact with the first metallization and spaced apart from one another by an n-doped channel zone through which the current path runs. A space charge region forms in the semiconductor body between the first and second p-doped zones to fully deplete the n-doped channel zone between the first and second p-doped zones and therefore prevent current flow between the first and second metallizations along the current path when a positive voltage is applied between the second metallization and the first metallization.