Methods for forming semiconductor device structures
US9064930B2 · kind B2 · utility
5Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.