Selective epitaxy process control
US9064960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2007 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Oct 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of selectively and epitaxially forming a silicon-containing material on a substrate surface contained within a process chamber are provided. In one or more embodiments, the pressure in the process chamber is reduced during deposition of material on the substrate and increased during etching of material from the substrate. According to an embodiment, process gases are flowed into the chamber through first zone and a second zone to provide a ratio of the amount of gas flowed to the first zone and the amount of gas flowed to the second zone. In one or more embodiments, the first zone is an inner radial zone and the second zone is an outer radial zone, and ratio of inner zone gas flow to outer zone gas flow is less during deposition than during etching. According to one or more embodiments, the selective epitaxial process includes repeating a cycle of a deposition and then an etching process, and an optional purge until the desired thickness of an epitaxial layer is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.